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| NTE11 (NPN) & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in low-frequency output amplifier, DC converter, and strobe applications. Features: D High Collector Current: IC = 5A Max D Low Collector-Emitter Saturation Voltage Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO NTE11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27V Collector-Emitter Voltage, VCEO NTE11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V NTE12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current NTE11 NTE12 Symbol ICBO VCB = 10V, IE = 0 VCB = 10V, IE = 0 - - - - 0.1 100 Test Conditions Min Typ Max Unit A nA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Emitter Cutoff Current NTE11 NTE12 Collector-Emitter Voltage NTE11 NTE12 Emitter-Base Voltage DC Current Gain NTE11 NTE12 NTE11 Only Collector-Emitter Saturation Voltage NTE11 NTE12 Transition Frequency NTE11 NTE12 Collector Output Capacitance NTE11 NTE12 Cob VCB = 20V, IE = 0, f = 1MHz VCB = 20V, IE = 0, f = 1MHz - - - 60 50 - pF pF fT VCB = 6V, IE = 50mA, f = 200MHz VCB = 6V, IE = 50mA, f = 200MHz - - 150 120 - - MHz MHz hFE2 VCE(sat) IC = 3A, IB = 100mA, Note 1 IC = 3A, IB = 100mA, Note 1 - - - 0.4 1 1.0 V V VEBO hFE1 VCE = 2V, IC = 500mA, Note 1 VCE = 2V, IC = 2A, Note 1 VCE = 2V, IC = 2A, Note 1 340 180 150 - - - 600 625 - VCEO IC = 1mA, IB = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 20 18 7 - - - - - - V V V Symbol IEBO VEB = 7V, IC = 0 VEB = 5V, IC = 0 - - - - 0.1 1.0 Test Conditions Min Typ Max Unit A A Note 1. Pulse measurement .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max ECB .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
Price & Availability of NTE11
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